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  2011-07-29 1 bcx51...-bcx53... 1 2 2 3 pnp silicon af transistors ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcx54...bcx56 (npn) ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package bcx51 bcx51-16 bcx52 bcx52-16 bcx53 bcx53-10 bcx53-16 aa ad ae am ah ak al 1=b 1=b 1=b 1=b 1=b 1=b 1=b 2=c 2=c 2=c 2=c 2=c 2=c 2=c 3=e 3=e 3=e 3=e 3=e 3=e 3=e sot89 sot89 sot89 sot89 sot89 sot89 sot89
2011-07-29 2 bcx51...-bcx53... maximum ratings parameter symbol value unit collector-emitter voltage bcx51 bcx52 bcx53 v ceo 45 60 80 v collector-base voltage bcx51 bcx52 bcx53 v cbo 45 60 100 emitter-base voltage v ebo 5 collector current i c 1 a peak collector current, t p 10 ms i cm 1.5 base current i b 100 ma peak base current i bm 200 total power dissipation t s 120 c p tot 2 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 15 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-07-29 3 bcx51...-bcx53... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 , bcx51 i c = 10 ma, i b = 0 , bcx52 i c = 10 ma, i b = 0 , bcx53 v (br)ceo 45 60 80 - - - - - - v collector-base breakdown voltage i c = 100 a, i e = 0 , bcx51 i c = 100 a, i e = 0 , bcx52 i c = 100 a, i e = 0 , bcx53 v (br)cbo 45 60 100 - - - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector-base cutoff current v cb = 30 v, i e = 0 v cb = 30 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a dc current gain 1) i c = 5 ma, v ce = 2 v i c = 150 ma, v ce = 2 v, bcx51...bcx53 i c = 150 ma, v ce = 2 v, bcx53-10 i c = 150 ma, v ce = 2 v, bcx51-16...bcx53-16 i c = 500 ma, v ce = 2 v h fe 25 40 63 100 25 - - 100 160 - - 250 160 250 - - collector-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v cesat - - 0.5 v base-emitter voltage 1) i c = 500 ma, v ce = 2 v v be(on) - - 1 ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 20 mhz f t - 125 - mhz 1 pulse test: t < 300s; d < 2%
2011-07-29 4 bcx51...-bcx53... dc current gain h fe = ? ( i c ) v ce = 2 v 10 10 10 10 bcx 51...53 ehp00440 h ma 0 1 34 fe 3 10 10 2 0 10 5 5 10 1 2 10 5 100 25 -50 555 c ?c ?c ?c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 10 0 0.4 0.8 bcx 51...53 ehp00441 v ce sat v ma 10 4 1 10 10 10 2 10 10 3 10 c 5 5 5 10 0 0.2 0.6 100 25 -50 ?c ?c ?c base-emitter saturation voltage i c = ? ( v besat ), h fe = 10 10 0 0.6 bcx 51...53 ehp00443 v be sat 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ?c ?c ?c collector current i c = ? ( v be ) v ce = 2v 10 0 0.6 bcx 51...53 ehp00437 v be 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ?c ?c ?c
2011-07-29 5 bcx51...-bcx53... collector cutoff current i cbo = ? ( t a ) v cbo = 30 v 10 0 50 100 150 bcx 51...53 ehp00442 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ ?c transition frequency f t = ? ( i c ) v ce = 10 v 10 10 10 10 bcx 51...53 ehp00439 f ma mhz 01 23 5 t 3 10 10 2 1 10 5 5 5 c total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 0.4 0.8 1.2 1.6 w 2.4 p tot permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
2011-07-29 6 bcx51...-bcx53... permissible pulse load p totmax / p totdc = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax/ p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2011-07-29 7 bcx51...-bcx53... package sot89 reel ?180 mm = 1.000 pieces/reel reel ?330 mm = 4.000 pieces/reel package outline foot print marking layout (example) standard packing 0.8 0.8 2.0 1.0 1.2 2.5 0.7 0.45 +0.2 1) ejector pin markings possible 1.5 3 0.2 -0.1 b 0.25 1) 0.05 45? 0.15 2.5 0.1 4 0.25 m b b 0.15 0.1 0.35 0.2 1 max. 10? 1.5 0.1 0.2 1.6 -0.15 +0.1 2.75 0.1 4.5 0.1 1 x3 0.2 max. 1) 123 8 0.2 4.3 1.6 4.6 12 pin 1 2005, june date code (ym) baw78d type code pin 1 manufacturer
2011-07-29 8 bcx51...-bcx53... edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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